SiC coating device (AF-IP device)
A dense SiC (silicon carbide) film with excellent wear resistance and oxidation resistance is formed using PVD. A thick film (7 μm) is formed using a new ion plating method.
Achieved SiC film formation using a PVD method that was not previously available through a newly developed arc filament-type ion plating method. Adopted a new film formation technology that enables the formation of dense SiC films with excellent wear resistance and oxidation resistance at low temperatures below 400°C. The ion plating method, using solid silicon as the starting material, realizes a simple and environmentally friendly clean process with low environmental impact. The new film formation equipment offers high control over film thickness and quality, and excels in exhaust gas treatment, maintenance, installation area, and running costs compared to CVD.
- Company：神港精機 東京支店
- Price：Other
